STRUCTURES AND METHODS FOR A FIELD-RESET SPIN-TORQUE MRAM
摘要
An apparatus and method of programming a spin-torque magnetoresistive memory array includes a metal reset line positioned near each of a plurality of magnetoresistive bits and configured to set the plurality of magnetoresistive memory elements to a known state by generating a magnetic field when an electrical current flows through it. A spin torque transfer current is then applied to selected ones of the magnetoresistive bits to switch the selected bit to a programmed state. In another mode of operation, a resistance of the plurality of bits is sensed prior to generating the magnetic field. The resistance is again sensed after the magnetic field is generated and the data represented by the initial state of each bit is determined from the resistance change. A spin torque transfer current is then applied only to those magnetoresistive bits having a resistance different from prior to the magnetic field being applied.
申请公布号
WO2011150170(A2)
申请公布日期
2011.12.01
申请号
WO2011US38081
申请日期
2011.05.26
申请人
EVERSPIN TECHNOLOGIES, INC.;ANDRE, THOMAS;TEHRANI, SAIED;SLAUGHTER, JON;RIZZO, NICHOLAS
发明人
ANDRE, THOMAS;TEHRANI, SAIED;SLAUGHTER, JON;RIZZO, NICHOLAS