发明名称 INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS
摘要 Disclosed are an insulation pattern forming method and a damascene process insulation pattern forming material capable of easily forming a multilayer structure without a complicated etching step. The disclosed insulation pattern forming method involves (I) a step for forming an organic pattern on a substrate, (II) a step for embedding an insulation material between the patterns of the organic pattern, (III) a step for removing the organic pattern to obtain a reversal pattern consisting of insulation material, and (IV) a step for curing the obtained reversal pattern.
申请公布号 WO2011149029(A1) 申请公布日期 2011.12.01
申请号 WO2011JP62136 申请日期 2011.05.26
申请人 JSR CORPORATION;DEI SATOSHI;NAMAI HAYATO;YASUDA KYOYU;HASEGAWA KOICHI 发明人 DEI SATOSHI;NAMAI HAYATO;YASUDA KYOYU;HASEGAWA KOICHI
分类号 H01L21/768;G03F7/40;H01L21/027;H01L21/3205 主分类号 H01L21/768
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