发明名称 |
INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS |
摘要 |
Disclosed are an insulation pattern forming method and a damascene process insulation pattern forming material capable of easily forming a multilayer structure without a complicated etching step. The disclosed insulation pattern forming method involves (I) a step for forming an organic pattern on a substrate, (II) a step for embedding an insulation material between the patterns of the organic pattern, (III) a step for removing the organic pattern to obtain a reversal pattern consisting of insulation material, and (IV) a step for curing the obtained reversal pattern. |
申请公布号 |
WO2011149029(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
WO2011JP62136 |
申请日期 |
2011.05.26 |
申请人 |
JSR CORPORATION;DEI SATOSHI;NAMAI HAYATO;YASUDA KYOYU;HASEGAWA KOICHI |
发明人 |
DEI SATOSHI;NAMAI HAYATO;YASUDA KYOYU;HASEGAWA KOICHI |
分类号 |
H01L21/768;G03F7/40;H01L21/027;H01L21/3205 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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