发明名称 |
3D SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A 3D semiconductor device is provided to enable a maser chip to have a channel load by connecting only the electrode pad of the master chip to a channel. CONSTITUTION: In a 3D semiconductor device, chips(110,120,130,140) are laminated on a substrate(150). Chips are connected to each other through a penetrating electrode(160). Chips are composed of first sides(112,122,132,142) and second sides(114,124,134,144). A first chip is operated as the master chip. The second to fourth chips are operated as a slave chip. |
申请公布号 |
KR20110129149(A) |
申请公布日期 |
2011.12.01 |
申请号 |
KR20100048616 |
申请日期 |
2010.05.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, UK SONG;JANG, DONG HYEON;JANG, SEONG JIN;LEE, HOON;KIM, JIN HO;KIM, NAM SEOG;MOON, BYUNG SIK;LEE, WOO DONG |
分类号 |
G11C5/02;G11C5/14;G11C7/10 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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