| 摘要 |
<P>PROBLEM TO BE SOLVED: To perform laser annealing with high quality. <P>SOLUTION: (a) A semiconductor substrate in which at least one kind of impurities is added to a surface layer of a first surface and a depth profile of the added impurities is grasped is prepared. (b) Based on the depth profile of impurities thus grasped, a deepest position from the first surface where the impurities are added is determined, and a target temperature at which the impurities added to that position can be activated is determined. (c) The semiconductor substrate is then fused in a range narrower than the depth of narrowest peak position from the first surface out of the positions where the impurity concentration has a peak, and the first surface of the semiconductor substrate is irradiated with a laser beam on condition that the deepest position from the first surface has a temperature equal to or higher than the target temperature. <P>COPYRIGHT: (C)2012,JPO&INPIT |
