| 摘要 |
The semiconductor component, in particular for use as a component that is sensitive to mechanical stresses in a micro-electromechanical semiconductor component, for example a pressure or acceleration sensor, is provided with a semiconductor substrate (1, 5), in the upper face of which an active region (78a, 200) made of a material of a first conductivity type is introduced by ion implantation. A bisecting channel region having a defined length (L) and width (B) is designed within the active region (78a, 200). In the active region (78a, 200), each of the ends of the channel region located in the longitudinal extension is followed by a contacting region (79, 80) made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material (81), which comprises transverse edges defining the length (L) of the channel region and longitudinal edges defining the width (B) of the channel region and which comprises an edge recess (201, 202) at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions (79, 80) that adjoin the channel region extending all the way into said edge recess. |
