NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A non-volatile memory device and a manufacturing thereof are provided to prevent silicon migration in forming a first control gate film by crystallizing first and second reserved silicon films which have different compositions. CONSTITUTION: In a non-volatile memory device and a manufacturing thereof, a semiconductor substrate(100) is formed into a single-crystal silicon. An element isolation pattern(110) is arranged inside a trench(101). A tunnel oxide layer pattern(120) is arranged in the top side of an active region which is defined by the element isolation pattern. The top side of the tunnel oxide layer pattern is lower than that of the element isolation pattern. A Floating gate pattern(200) is arranged on a first dielectric layer pattern.