LOW SCHOTTKY BARRIER SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

A low Schottky barrier semiconductor structure is provided. The structure comprises: a substrate (100); a SiGe layer with low Ge content formed on the substrate; a channel layer (900) with high Ge content formed on the SiGe layer; a gate stack (200) formed on the substrate and a sidewall (400) of one or more layers formed on both sides of the gate stack; metal source/drain (300) formed in the channel layer and on the both sides of the gate stack, respectively; and an insulation layer (600) formed between the substrate and the metal source and between the substrate and the metal drain, respectively. A method for forming the low Schottky barrier semiconductor structure is also provided.