| 摘要 |
Disclosed is a method for evaluating a wafer having a thin film on the surface of a substrate, wherein film thickness distribution of the thin film of the wafer is calculated. In the method, light having a single wavelength (?) is radiated to a partial region of the wafer surface, light reflected by the region is detected, and the intensity of the reflected light is measured by pixel that is formed by dividing the region into a plurality of regions, thereby obtaining the reflected light intensity distribution in the region. Then, on the basis of the reflected light intensity distribution, the film thickness distribution of the thin film in the region is obtained. Consequently, the micro film thickness distribution of the thin film (SOI layer) over the whole wafer surface, said film thickness distribution affecting a device, can be simply measured at low cost with sufficient spatial resolution. |
