| 摘要 |
An semiconductor device is disclosed. The device includes a semiconductor body, a layer of insulating material disposed over the semiconductor body, and a region of gate electrode material disposed over the layer of insulating material. Also included are a source region adjacent to gate region and a drain region adjacent to the gate region. A gate connection is disposed over the semiconductor body, wherein the gate connection includes a region of gate electrode material electrically coupling a contact region to the gate electrode. An insulating region is disposed on the semiconductor body beneath the gate connection. |
