发明名称 |
TITANIUM OXIDE THIN FILM, PROCESS FOR PRODUCING THE SAME, MAGNETIC MEMORY, OPTICAL INFORMATION RECORDING MEDIUM, AND CHARGE STORAGE MEMORY |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a titanium oxide thin film exhibiting non-conventional new properties, a process for producing the thin film, and a magnetic memory, an optical information recording medium and a charge storage memory produced, by using the thin film. <P>SOLUTION: A raw material solution containing TiO<SB POS="POST">2</SB>particles is applied onto the surface of a substrate 2 to form a TiO<SB POS="POST">2</SB>particle layer on the surface of the substrate 2, and the substrate 2 is burned under a hydrogen atmosphere to form a titanium oxide thin film 3 on the surface of the substrate 2. In this manner, it becomes possible to provide the titanium oxide thin film 3 which does not undergo phase transition at room temperature unlike conventional bulk materials that undergo the phase transition between a non-magnetic semiconductor and a paramagnetic metal at about 460K, and therefore has such a new and non-conventional property that the Ti<SB POS="POST">3</SB>O<SB POS="POST">5</SB>particles themselves can keep the properties of a paramagnetic metal at any time in any temperature range. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011241137(A) |
申请公布日期 |
2011.12.01 |
申请号 |
JP20100117343 |
申请日期 |
2010.05.21 |
申请人 |
UNIV OF TOKYO |
发明人 |
OGOSHI SHINICHI;TOKORO YUKO;HAKOE FUMIYOSHI;KAKUBUCHI YOSHIHIDE;HASHIMOTO KAZUHITO |
分类号 |
C01G23/04;G11B7/243;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
C01G23/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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