| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an avalanche photodiode which is capable of supplying desired stable avalanche breakdown voltage and which has an electric field control layer by means of an electron as an effective carrier. <P>SOLUTION: An avalanche photodiode at least comprises: a first semiconductor layer 102 consisting of n-type semiconductor formed on a substrate 101; a multiplication layer 103 consisting of undoped semiconductor formed on the first semiconductor layer 102; an electric field control layer 104 consisting of p-type semiconductor formed on the multiplication layer 103; a light absorption layer 105 consisting of semiconductor formed on the electric field control layer 104; a second semiconductor layer 106 consisting of p-type semiconductor formed on the light absorption layer 105; a first electrode 107 formed on the second semiconductor layer 106 ; and a second electrode 108 formed at the first semiconductor layer 102. The electric field control layer 104 is elaborated from compound semiconductor including Sb and made p-type by introducing C as impurity. <P>COPYRIGHT: (C)2012,JPO&INPIT |
