| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of providing a stable electric property and high reliability to the semiconductor device using an oxide semiconductor. <P>SOLUTION: In steps for manufacturing a bottom-gate structure transistor having an oxide semiconductor film, dehydration or dehydrogenation treatment by heat treatment, and oxygen doping treatment are performed. The transistor having an oxide semiconductor film treated by dehydration or dehydrogenation treatment by heat treatment, and treated by oxygen doping treatment in steps for manufacturing the same, can reduce the amount of change of a threshold voltage of the transistor even before and after a bias-thermal stress test(BT test), and have high reliability. <P>COPYRIGHT: (C)2012,JPO&INPIT |
