| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a composite substrate such that a first substrate made of a nitride-based compound semiconductor and a second substrate has high bonding strength. <P>SOLUTION: The method of manufacturing the composite substrate includes the steps of: carrying out ion implantation from a surface of a bulk substrate made of the nitride-based compound semiconductor; forming a stuck substrate by sticking the bulk substrate and the second substrate together; raising the temperature of the stuck substrate up to first temperature; holding the first temperature for a certain time; and parting the bulk substrate except the first substrate which is a part of it from the stuck substrate so that the first substrate remains on the second substrate so as to obtain the composite substrate, expression (I) of 215≥10(A-B)<SP POS="POST">2</SP>-10(A-B)+T<SB POS="POST">1</SB>≥410 being satisfied, where T<SB POS="POST">1</SB>is the firs temperature, a coefficient of thermal expansion of the first substrate is A×10<SP POS="POST">-6</SP>°C, and a coefficient of thermal expansion of the second substrate is B×10<SP POS="POST">-6</SP>°C. <P>COPYRIGHT: (C)2012,JPO&INPIT |
