| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having defects suppressed as much as possible by selectively filling a structure defect such as a pin hole or a crack of a semiconductor film with an insulation resin, and a manufacturing method of the photoelectric conversion device. <P>SOLUTION: A manufacturing method of a photoelectric conversion device comprises forming on a substrate, a first electrode, a first impurity semiconductor layer, an intrinsic semiconductor layer, and a second impurity semiconductor layer; specifying the position of a structure defect in the semiconductor layer or in a part thereof by using means for detecting the structure defect; discharging a liquid insulation resin material to the structure defect or the periphery thereof by using means for discharging a liquid, filling the inside of the structure defect with the insulation resin material; curing the insulation resin material by using means for curing the insulation resin material, and forming a second electrode on the second impurity semiconductor layer and the cured insulation resin. <P>COPYRIGHT: (C)2012,JPO&INPIT |
