| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a layout capable of surely suppressing a variation in a gate length due to an optical proximity effect in a standard cell neighboring a diode cell in a semiconductor device having the diode cell. <P>SOLUTION: A standard cell C1 extends in a Y direction and comprises gate patterns G1,G2,G3 arranged in an X direction at the same pitch. A diode cell C2 adjoins the standard cell C1 in the Y direction. In gate patterns G1,G2,G3, each of termination parts e1,e2,e3 exists at same position in the Y direction, and their widths in the X direction are equivalent. The diode cell C2 comprises diffusion layers D1-D10 acting as a diode, and also comprises a plurality of opposing termination parts eo1,eo2,eo3 arranged so as to oppose to the termination parts e1,e2,e3 of the gate patterns G1,G2,G3 in the standard cell C1, and consisting of gate patterns G4,G5,G6. <P>COPYRIGHT: (C)2012,JPO&INPIT |
