发明名称 |
Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
摘要 |
A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.
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申请公布号 |
US2011290321(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
US201113137281 |
申请日期 |
2011.08.03 |
申请人 |
ITO ATSUO;AKIYAMA SHOJI;KAWAI MAKOTO;TANAKA KOICHI;TOBISAKA YUUJI;KUBOTA YOSHIHIRO;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
ITO ATSUO;AKIYAMA SHOJI;KAWAI MAKOTO;TANAKA KOICHI;TOBISAKA YUUJI;KUBOTA YOSHIHIRO |
分类号 |
H01L31/0224;H01L31/028;H01L31/18 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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