发明名称 Method for producing single crystal silicon solar cell and single crystal silicon solar cell
摘要 A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.
申请公布号 US2011290321(A1) 申请公布日期 2011.12.01
申请号 US201113137281 申请日期 2011.08.03
申请人 ITO ATSUO;AKIYAMA SHOJI;KAWAI MAKOTO;TANAKA KOICHI;TOBISAKA YUUJI;KUBOTA YOSHIHIRO;SHIN-ETSU CHEMICAL CO., LTD. 发明人 ITO ATSUO;AKIYAMA SHOJI;KAWAI MAKOTO;TANAKA KOICHI;TOBISAKA YUUJI;KUBOTA YOSHIHIRO
分类号 H01L31/0224;H01L31/028;H01L31/18 主分类号 H01L31/0224
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