发明名称 Method for Fast Macropore Etching in n-Type Silicon
摘要 Method for the electrochemical etching of macropores in n-type silicon wafers, using illumination of the wafer reverse sides and using an aqueous electrolyte, characterized in that the electrolyte is an aqueous acetic acid solution with the composition of H2O: CH3COOH in the range between 2:1 and 7:3, with an addition of at least 9 percent by weight hydrofluoric acid.
申请公布号 US2011294302(A1) 申请公布日期 2011.12.01
申请号 US20090921035 申请日期 2009.02.28
申请人 OSSEI-WUSU EMMANUEL;COJOCARU ALA;CARSTENSEN JUERGEN;FOELL HELMUT;CHRISTIAN-ALBRECHTS-UNIVERSITAET ZU KIEL 发明人 OSSEI-WUSU EMMANUEL;COJOCARU ALA;CARSTENSEN JUERGEN;FOELL HELMUT
分类号 H01L21/3063 主分类号 H01L21/3063
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