发明名称 METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE
摘要 A method of programming a semiconductor device includes performing an initial program operation on all memory cells included in a selected memory cell block to set threshold voltages of all the memory cells to a voltage equal to or greater than 0 Volts, erasing memory cells of a selected page in the selected memory cell block, and programming the memory cells of the selected page.
申请公布号 US2011292734(A1) 申请公布日期 2011.12.01
申请号 US20100982796 申请日期 2010.12.30
申请人 KIM YONG WOOK 发明人 KIM YONG WOOK
分类号 G11C16/10 主分类号 G11C16/10
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