| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an internal matching type transistor whose frequency band is adjusted without changing an internal matching circuit or a package outer shape size. <P>SOLUTION: A base material 10 includes V grooves 12 and 14. The base material 10 has a region 10a and regions 10b and 10c opposed to the region 10a across the V grooves 12 and 14. A transistor 16 is soldered onto the region 10a of the base material 10, and internal matching circuits 18 and 20 are soldered onto the regions 10b and 10c. Gold wires 22 and 24 connect the transistor 16 and internal matching circuits 18 and 20 together across above the V grooves 12 and 14. Solder materials 26 and 28 are buried in the V grooves 12 and 14 between the gold wires 22 and 14 and V grooves 12 and 14. Capacities C1 and C2 between the gold wires 22 and 24 and base material 10 can be adjusted by adjusting the amounts of the solder materials 26 and 28 and thereby changing distances between the gold wires 22 and 24 and a GND potential. <P>COPYRIGHT: (C)2012,JPO&INPIT |
