| 摘要 |
A small switching device capable of implementing low-distortion characteristics formed on a semiconductor substrate to switch radio frequency signal paths is provided. An FET which is an example of switching device formed on a semiconductor substrate 109 includes two source/drain electrodes each of which is comb-shaped, at least two gate electrodes meandering between the two source/drain electrodes, and a conductive layer interposed between adjacent gate electrodes along the adjacent gate electrodes, in which a layer immediately underneath straight-line portions of the gate electrode is electrically separated from a layer immediately underneath angled portions of the gate electrode, each of the straight-line portions being in parallel with each of teeth of said two source/drain electrodes, and each of the angled portions connecting a pair of adjacent straight-line portions. |
