发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT HAVING A MULTI-CHIP STRUCTURE
摘要 A semiconductor integrated circuit having a multi-chip structure includes a number of stacked semiconductor chips. Each of the semiconductor chips includes a first through electrode formed through the semiconductor chip, a first bump pad formed over the semiconductor chip at a region where the first bump pad is separated from the first through electrode, a first internal circuit formed inside the semiconductor chip, coupled to the first through electrode through a first metal path, and coupled to the first bump pad through a second metal path; and a redistribution layer (RDL) formed over a backside of the semiconductor chip.
申请公布号 US2011291265(A1) 申请公布日期 2011.12.01
申请号 US20100831467 申请日期 2010.07.07
申请人 JIN SIN-HYUN;BYEON SANG-JIN 发明人 JIN SIN-HYUN;BYEON SANG-JIN
分类号 H01L25/065;H01L21/60;H01L23/538 主分类号 H01L25/065
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