发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT HAVING A MULTI-CHIP STRUCTURE |
摘要 |
A semiconductor integrated circuit having a multi-chip structure includes a number of stacked semiconductor chips. Each of the semiconductor chips includes a first through electrode formed through the semiconductor chip, a first bump pad formed over the semiconductor chip at a region where the first bump pad is separated from the first through electrode, a first internal circuit formed inside the semiconductor chip, coupled to the first through electrode through a first metal path, and coupled to the first bump pad through a second metal path; and a redistribution layer (RDL) formed over a backside of the semiconductor chip. |
申请公布号 |
US2011291265(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
US20100831467 |
申请日期 |
2010.07.07 |
申请人 |
JIN SIN-HYUN;BYEON SANG-JIN |
发明人 |
JIN SIN-HYUN;BYEON SANG-JIN |
分类号 |
H01L25/065;H01L21/60;H01L23/538 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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