发明名称 REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON USING THE MONOSILANE PROCESS
摘要 <p>A reactor that produces polycrystalline silicon using a monosilane process includes a reactor base plate having a multiplicity of nozzles formed therein through which a silicon-containing gas flows, a plurality of filament rods mounted on the reactor base plate, and a gas outlet opening located at a selected distance from the nozzles to feed used monosilane to an enrichment and/or treatment stage, wherein the gas outlet opening is formed at a free end of an inner tube, the inner tube is conducted through the reactor base plate, and the inner tube has an outer wall and an inner wall and thus forms an intermediate space in which at least one cooling water circuit is conducted.</p>
申请公布号 EP2389340(A1) 申请公布日期 2011.11.30
申请号 EP20090783907 申请日期 2009.10.09
申请人 SCHMID SILICON TECHNOLOGY GMBH 发明人 STOECKLINGER, ROBERT
分类号 C01B33/035;B01J15/00;B01J19/24 主分类号 C01B33/035
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