| 摘要 |
PURPOSE: A method for processing a wafer is provided to prevent metallic impurities from being diffused to a silicon wafer by forming a porous silicon layer which functions as a diffusion preventing layer in a silicon wafer. CONSTITUTION: A silicon wafer(100) is provided. A stopping layer(105) is formed on the silicon wafer. A trap layer(110) is formed from the rear(100b) of the silicon wafer to the stopping layer. The trap layer is composed of a porous silicon layer. A pad oxide layer(115) is formed on the front(100a) and rear of the silicon wafer.
|
