发明名称 |
Semiconductor light-emitting device |
摘要 |
A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer fomred to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.
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申请公布号 |
EP2390929(A1) |
申请公布日期 |
2011.11.30 |
申请号 |
EP20110173500 |
申请日期 |
1999.03.25 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
SHIMOYAMA, KENJI;NAGAO, SATORU;FUJI, KATSUSHI;GOTO, HIDEKI |
分类号 |
H01L33/00;H01S5/065;H01S5/223;H01S5/227;H01S5/32;H01S5/323;H01S5/343 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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