| 摘要 |
Provides an IC chip for high frequency region, particularly, packaged substrate in which no malfunction or error occurs even if 3 GHz is exceeded.
A conductive layer 34P is formed in the thickness of 30µm on a core substrate 30 and a conductive circuit 58 on an interlayer resin insulation layer 50 is formed in the thickness of 15µm. By thickening the conductive layer 34P, the volume of the conductor itself can be increased thereby decreasing its resistance. Further, by using the conductive layer 34 as a power source layer, the capacity of supply of power to an IC chip can be improved. |
