| 摘要 |
<p>A semiconductor device which has low input inductance is provided. It includes: source finger electrodes (3) disposed by predetermined direction on the main substrate 1; drain finger electrodes (4) placed and disposed a predetermined interval to each of the source finger electrodes (3) ; gate finger electrodes (2) disposed between the source finger electrodes (3) and the drain finger electrodes (4), respectively; source pads (6) placed and disposed a predetermined interval at one side of finger electrode array; drain pads (7) disposed between the source pads (6); gate pads (5) which placed and disposed a predetermined interval at the another side of the finger electrode array; source electrode wirings (source bus-line LS, source bridge-line NS and sourcebridge-lineM) for connecting the source finger electrodes (3) to the source pads (6); drain electrode wirings(drain bus-line LD, the drain bridge-line ND, and the drain bridge-line P) for connecting the drain finger electrodes (4) to the drain pads (7); and gate bus-lines for connecting the gate finger electrodes (2) to the gate pads (5).</p> |
