发明名称 |
Ferroelectric memory and method in which polarity of domain of ferroelectric memory is determined using ratio of currents |
摘要 |
Methods and arrangements for data storage are discussed. Embodiments include applying a first voltage between a tip and an electrode, thereby forming a polarized domain in a ferroelectric material between 1 nanometer (nm) and 50 nm in thickness. The embodiments may also include applying another voltage through the tip, thereby generating a current responsive to an orientation of the polarized domain. The embodiments may also include measuring the current and determining the orientation of the polarized domain, based upon the measuring. |
申请公布号 |
US8068405(B2) |
申请公布日期 |
2011.11.29 |
申请号 |
US20070772194 |
申请日期 |
2007.06.30 |
申请人 |
MA QING;RAO VALLURI R.;WANG LI-PENG;FRANKLIN NATHAN;INTEL CORPORATION |
发明人 |
MA QING;RAO VALLURI R.;WANG LI-PENG;FRANKLIN NATHAN |
分类号 |
G11B9/02 |
主分类号 |
G11B9/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|