发明名称 |
Semiconductor storage device including a gate insulating film with a favorable nitrogen concentration profile and method for manufacturing the same |
摘要 |
A semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by favorable nitrogen concentration profile of a gate insulating film, and a method for manufacturing the semiconductor device. The semiconductor device fabricating method operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, including introducing an oxynitriding species previously diluted by plasma excitation gas into a plasma processing apparatus, generating an oxynitriding species by a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus. |
申请公布号 |
US8067809(B2) |
申请公布日期 |
2011.11.29 |
申请号 |
US20050576499 |
申请日期 |
2005.09.30 |
申请人 |
KITAGAWA JUNICHI;OZAKI SHIGENORI;TERAMOTO AKINOBU;OHMI TADAHIRO;TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY |
发明人 |
KITAGAWA JUNICHI;OZAKI SHIGENORI;TERAMOTO AKINOBU;OHMI TADAHIRO |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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