发明名称 |
Nanoelectronic structure and method of producing such |
摘要 |
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
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申请公布号 |
US8067299(B2) |
申请公布日期 |
2011.11.29 |
申请号 |
US20100662962 |
申请日期 |
2010.05.13 |
申请人 |
SAMUELSON LARS IVAR;SVENSSON PATRIK;OHLSSON JONAS;LOWGREN TRULS;QUNANO AB |
发明人 |
SAMUELSON LARS IVAR;SVENSSON PATRIK;OHLSSON JONAS;LOWGREN TRULS |
分类号 |
H01L21/20;H01L21/336;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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