发明名称 Semiconductor device and a method of manufacturing the same
摘要 A method including forming an intermediate product, the intermediate product being configured to include a wiring substrate including a plurality of first electrodes, a plurality of second electrodes and a plurality of test electrodes, a first semiconductor chip mounted over the wiring substrate and including a plurality of first pads electrically connected respectively to the first electrodes, and a second semiconductor chip stacked over the first semiconductor chip and including a plurality of second pads electrically connected respectively to the second electrodes; encapsulating the first and second semiconductor chips; and performing electrical tests on the first and second semiconductor chips by use of the test electrodes, after the encapsulating of the first and second semiconductor chips.
申请公布号 US8067251(B2) 申请公布日期 2011.11.29
申请号 US20100982032 申请日期 2010.12.30
申请人 MASUDA MASACHIKA;USAMI TOSHIHIKO;ELPIDA MEMORY, INC. 发明人 MASUDA MASACHIKA;USAMI TOSHIHIKO
分类号 H01L21/66;H01L25/18;H01L21/60;H01L23/31;H01L25/065;H01L25/07 主分类号 H01L21/66
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