发明名称 |
Method of manufacturing semiconductor device |
摘要 |
The present invention provides a method of manufacturing a semiconductor device in which a thinned substrate of a semiconductor or semiconductor device is handled without cracks in the substrate and treated with heat to improve a contact between semiconductor back surface and metal in a high yield and a semiconductor device may be manufactured in a high yield. In the method of manufacturing a semiconductor device according to the present invention, a notched part is formed from a surface to a middle in a semiconductor substrate by dicing and the surface of the substrate is fixed to a support base. Next, a back surface of the substrate is ground to thin the semiconductor substrate and then a metal electrode and a carbon film that is a heat receiving layer are sequentially formed on the back surface of the substrate. Next, the carbon film is irradiated with light at a power density of 1 kW/cm2 to 1 MW/cm2 for a short time of 0.01 ms to 10 ms to transfer heat from the carbon film and alloy an interface between a semiconductor and the metal electrode. Subsequently, the semiconductor substrate is separated at the notched part into pieces.
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申请公布号 |
US8067296(B2) |
申请公布日期 |
2011.11.29 |
申请号 |
US20060094756 |
申请日期 |
2006.11.08 |
申请人 |
KAWANA YOSHIYUKI;SANO NAOKI;SUCCESS INTERNATIONAL CORPORATION;HIGHTEC SYSTEMS CORPORATION |
发明人 |
KAWANA YOSHIYUKI;SANO NAOKI |
分类号 |
H01L21/46;H01L21/301;H01L21/78 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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