发明名称 |
Techniques for placement of active and passive devices within a chip |
摘要 |
A semiconductor die includes a semiconductive substrate layer with first and second sides, a metal layer adjacent the second side of the semiconductive substrate layer, one or more active devices in an active layer on the first side of the semiconductive substrate layer; and a passive device in the metal layer in electrical communication with the active layer. The passive device can electrically couple to the active layer with through silicon vias (TSVs). |
申请公布号 |
US8067816(B2) |
申请公布日期 |
2011.11.29 |
申请号 |
US20090364844 |
申请日期 |
2009.02.03 |
申请人 |
KIM JONGHAE;GU SHIQUN;HENDERSON BRIAN MATTHEW;TOMS THOMAS R.;NOWAK MATTHEW;QUALCOMM INCORPORATED |
发明人 |
KIM JONGHAE;GU SHIQUN;HENDERSON BRIAN MATTHEW;TOMS THOMAS R.;NOWAK MATTHEW |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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