发明名称 Techniques for placement of active and passive devices within a chip
摘要 A semiconductor die includes a semiconductive substrate layer with first and second sides, a metal layer adjacent the second side of the semiconductive substrate layer, one or more active devices in an active layer on the first side of the semiconductive substrate layer; and a passive device in the metal layer in electrical communication with the active layer. The passive device can electrically couple to the active layer with through silicon vias (TSVs).
申请公布号 US8067816(B2) 申请公布日期 2011.11.29
申请号 US20090364844 申请日期 2009.02.03
申请人 KIM JONGHAE;GU SHIQUN;HENDERSON BRIAN MATTHEW;TOMS THOMAS R.;NOWAK MATTHEW;QUALCOMM INCORPORATED 发明人 KIM JONGHAE;GU SHIQUN;HENDERSON BRIAN MATTHEW;TOMS THOMAS R.;NOWAK MATTHEW
分类号 H01L29/00 主分类号 H01L29/00
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