发明名称 |
Semiconductor device having recess channel structure and method for manufacturing the same |
摘要 |
A semiconductor device having a recess channel structure includes a semiconductor substrate having a recess formed in a gate forming area in an active area; an insulation layer formed in the semiconductor substrate so as to define the active area and formed so as to apply a tensile stress in a channel width direction; a stressor formed in a surface of the insulation layer and formed so as to apply a compressive stress in a channel height direction; a gate formed over the recess in the active area; and source/drain areas formed in a surface of the active area at both side of the gate. |
申请公布号 |
US8067799(B2) |
申请公布日期 |
2011.11.29 |
申请号 |
US20100947742 |
申请日期 |
2010.11.16 |
申请人 |
CHOI KANG SIK;HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI KANG SIK |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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