发明名称 |
CMOS solid state imaging device |
摘要 |
A CMOS solid state imaging device capable of achieving a higher image quality while reducing the size and power consumption and increasing the number of pixels and speeds. The CMOS solid state imaging device includes a light-receiving portion that performs photoelectric conversion according to a quantity of received light, a transfer gate used to read out charges obtained through the photoelectric conversion in the light-receiving portion, and a peripheral transistor in a periphery of the light-receiving portion. A voltage applied to the transfer gate is set higher than a voltage applied to the peripheral transistor. |
申请公布号 |
US8068156(B2) |
申请公布日期 |
2011.11.29 |
申请号 |
US20100715878 |
申请日期 |
2010.03.02 |
申请人 |
MARUYAMA YASUSHI;SONY CORPORATION |
发明人 |
MARUYAMA YASUSHI |
分类号 |
H04N3/14;H01L27/00;H01L27/146;H01L31/062;H04N5/335;H04N5/355;H04N5/369;H04N5/374 |
主分类号 |
H04N3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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