| 摘要 |
A method for forming a fuse in a semiconductor device is disclosed. The method for forming the fuse in the semiconductor device forms an interlayer insulating layer when forming a fuse, and forms neighboring metal lines having different thicknesses using a zigzag-opened mask, thus preventing a neighboring fuse of a fuse to be blown from being damaged. A method for manufacturing the semiconductor device deposits a first interlayer insulating layer on a semiconductor substrate, patterns the first interlayer insulating layer using a zigzag-opened pad type mask such that the first interlayer insulating layer has different step heights where the same step height is arranged at every second step height location, deposits a second interlayer insulating layer, patterns the second interlayer insulating layer, and buries a metal on an entire surface, and planarizes the metal until the second interlayer insulating layer is exposed, thus forming a metal pattern. |
