OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR

摘要

PURPOSE: An oxide semiconductor thin film transistor is provided to enhance electrical reliability and reliability by minimizing the reduction of mobility within an oxide semiconductor. CONSTITUTION: A source electrode and a drain electrode comprise a first metal element having first oxide formation free energy. A gate insulation layer(150) insulates a gate electrode from the source electrode and the drain electrode. A semiconductor pattern(300) has a first side which contacts to the gate insulation layer and a second side which contacts to the source electrode and the drain electrode. The semiconductor pattern comprises an additional element having second oxide formation free energy which is greater than or equal to a absolute value of the first oxide formation free energy. The content of the additional element which is includes in a part which is close to the first side is little or zero than the content of the additional element which is includes in a part which is close to the second side.