摘要 |
A semiconductor device comprises an active region having an upper portion and a sidewall portion which are protruded from the top surface of a device isolation region, and a silicide film disposed in the upper portion and the sidewall portion of the active region, thereby effectively reducing resistance in a source/drain region of the semiconductor device. As a result, the entire resistance of the semiconductor device comprising a fin-type gate can be reduced to improve characteristics of the semiconductor device.
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