QUANTUM-DOT LIGHT EMITTING DIODE AND METHOD FOR FABRICATION THE SAME

摘要

PURPOSE: A quantum dot light emitting device and a manufacturing method thereof are provided to reduce manufacturing costs by forming a quantum light emitting layer and a charge transport layer by a solution process. CONSTITUTION: An anode(210) is formed in the top of a substrate. A quantum light-emitting layer(230) is formed on the anode and a charge transport particle and a quantum dot are mixed. A cathode is formed on the quantum light-emitting layer. A charge transport particle is an oxide nano particle. The diameter of a quantum dot is 2nm to 20nm. An electron-transport layer(240a) is composed an N-type semiconductor nano particle and is formed on the quantum light-emitting layer.