| 摘要 |
PURPOSE: A through-silicon via filling using an electrolyte having a dual state inhibitor is provided to charge a big recess having a high-aspect ratio without the vaporizing of copper in a field section. CONSTITUTION: A through-silicon via filling using an electrolyte having a dual state inhibitor comprises the following steps. The substrate having the big recess type featured unit of the high-aspect ratio is offered to an electric plating device(303). The diameter or width of the recess type featured unit is at least 1μm and the aspect ratio is at least approximately 5:1. While the substrate is electric-biased under the electric potential-control condition, by contacting the galvano-solution and the substrate containing the organic dual-state inhibitor(DSI) which is composed in order to obstruct the metal deposition of the metallic ion and the field section the recess type featured unit is electric-plated(305). |
