METHOD FOR MANUFACTURING SILICON INTERPOSER

摘要

PURPOSE: A method for manufacturing a silicon interposer is provided to easily form a solder bump by overcharging copper in the TSV(Through Silicon Via) of a substrate and projecting a copper post more than the substrate. CONSTITUTION: A TSV(Through Silicon Via)(130) is formed in a silicon substrate. An oxide film(140) and a copper seed layer(150) are formed in the silicon substrate in which the TSV is formed. A mask layer is formed in the upper side and the lower side of the silicon substrate. A copper post is formed to be dented more than a mask layer. One end of the cooper post is projected more than the silicon substrate by filling the copper in the TSV. Solder is deposited in one end of the copper post and the mask layer is removed. A solder bump is formed in one end of the copper post through a reflow process.