| 发明名称 |
IMPLANT MATERIAL AND METHOD FOR PRODUCING THE SAME |
| 摘要 |
<p>An implant material includes a base material, and a silicon-containing carbon thin film formed on a surface of the base material. The carbon thin film contains a C-C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded, and a ratio of the SiC component is 0.06 or higher.</p> |
| 申请公布号 |
KR20110127683(A) |
申请公布日期 |
2011.11.25 |
| 申请号 |
KR20117021028 |
申请日期 |
2009.02.10 |
| 申请人 |
TOYO ADVANCED TECHNOLOGIES CO., LTD. |
发明人 |
NIKAWA HIROKI;MAKIHIRA SEICHIYOU;MINE YUICHI;ABE YOSHINORI;NAKATANI TATSUYUKI;OKAMOTO KEISHI;NITTA YUKI |
| 分类号 |
A61L27/30;A61C8/00;A61L27/04;A61L27/08 |
主分类号 |
A61L27/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
