发明名称 DISPOSITIF A SEMI-CONDUCTEUR
摘要 <p>A semiconductor device has a semiconductor substrate, an insulating film, a semiconductor element and a resistance element. The semiconductor substrate has a first trench. The insulating film covers an inner surface of the first trench. The semiconductor element has an electrode. The resistance element is electrically connected to the electrode to form a resistance to a current flowing through the electrode, and is arranged in the first trench with the insulating film therebetween. Thereby, the semiconductor device can have a resistance element that has a small footprint and can pass a large current with high reliability.</p>
申请公布号 FR2916900(B1) 申请公布日期 2011.11.25
申请号 FR20080054875 申请日期 2008.07.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 KUSUNOKI SHIGERU;MOCHIZUKI KOICHI;KAWAKAMI MINORU
分类号 H01L29/78 主分类号 H01L29/78
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