| 摘要 |
A method of manufacturing a solar cell having an effective minority charge carrier lifetime (τeff) of at least 500μs, said method comprising: providing a semiconductor wafer; and passivating a surface of said wafer by ALD-depositing a metal oxide layer on said surface by sequentially and alternatingly: (iii) exposing said surface to a first precursor, resulting in a coverage of the surface with the first precursor, and (iv) exposing said surface to a second precursor, resulting in a coverage of the surface with the second precursor, wherein at least one of steps (i) and (ii) is stopped before the coverage of the surface reaches a saturation level.
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