发明名称 |
Semiconductor Devices Having a Three-Dimensional Stacked Structure and Methods of De-Skewing Data Therein |
摘要 |
A semiconductor memory device having a 3D stacked structure includes: a first semiconductor area with a stacked structure of a first layer having first data and a second layer having second data; a first line for delivering an access signal for accessing the first semiconductor area; and a second line for outputting the first and/or second data from the first semiconductor area, wherein access timings of accessing the first and second layers are controlled so that a first time delay from the delivery of the access signal to the first layer to the output of the first data is substantially identical to a second time delay from the delivery of the access signal to the second layer to the output of the second data, thereby compensating for skew according to an inter-layer timing delay and thus performing a normal operation. Accordingly, the advantage of high-integration according to a stacked structure can be maximized by satisfying data input/output within a predetermined standard. |
申请公布号 |
US2011286254(A1) |
申请公布日期 |
2011.11.24 |
申请号 |
US201113108130 |
申请日期 |
2011.05.16 |
申请人 |
YU HAK-SOO;LEE SANG-BO;HWANG HONG-SUN;SOHN DONG-HYUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YU HAK-SOO;LEE SANG-BO;HWANG HONG-SUN;SOHN DONG-HYUN |
分类号 |
G11C5/02 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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地址 |
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