SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a method of fabricating the same are provided to minimize an over etching due to the height difference between contact holes by forming a reserved contact hole through a barrier rip. CONSTITUTION: In a semiconductor device and a method of fabricating the same, a substrate(100) comprises a first area(10) and a second area(20). A pattern structure including each pattern(108) is arranged on the substrate within the first area. A conductive pattern(CP) is arranged on the substrate within the second area. The conductive patterns includes a connection unit connecting a plurality of gate electrodes and one end of a gate electrode. A semiconductor pillar(130) comprises a semiconductor(131), a filling insulating material(132), and a drain(133).