SEMICONDUCTOR DEVICE AND METHOD FOR CREATING ITS LAYOUT

摘要

PROBLEM TO BE SOLVED: To reduce discrepancies in the width of a gate electrode section and a protruding length from a gate electrode section in a semiconductor device and in its manufacturing method.

SOLUTION: The semiconductor device comprises an actual pattern 431 having a gate electrode section and a protruding section and a plurality of line patterns including a dummy pattern 433 which is disposed in parallel with the actual pattern 431. Two dummy patterns 433 and the line pattern which is interposed between the foregoing and includes an actual pattern 432 together constitute a line pattern parallel running section which runs in parallel with equal intervals. Each line pattern in the line pattern parallel running section includes line terminating sections 414 which are identical in width and substantially flush with each other. Identical distances 403 between terminating sections are provided on the extension of each line terminating section 414, to form a line terminating section equalizing dummy pattern 420. The line terminating section equalizing dummy pattern 420 includes a plurality of line-like patterns which are identical in width and formed at equal intervals as the line pattern.

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