发明名称 JOINT MATERIAL, METHOD OF MANUFACTURING SAME, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a joint material whose joint reliability is improved, a semiconductor device using the joint material, and a method of manufacturing same. <P>SOLUTION: As a joint material for jointing a semiconductor element and a frame or substrate, a clad material is used in which an Al system layer 101 is sandwiched by an X system layer 102 (X=Ge, Mg, In, Sn, Ag, Au, Ga), and further, the outside of the X system layer 102 is sandwiched by a Zn system layer 103. By jointing using a clad material like this, the melting point of material is lowered and cracking of the semiconductor element is prevented, and further, a void ratio of the joint part can be suppressed to be 10 wt.% or less. Further, wettability between the semiconductor element and the frame or substrate can be assured, thus, a high reliability of the joint part is assured. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011238838(A) 申请公布日期 2011.11.24
申请号 JP20100110187 申请日期 2010.05.12
申请人 HITACHI CABLE LTD 发明人 YAMAGUCHI TAKUTO;OKAMOTO MASAHIDE;IKEDA YASUSHI;DONG QING PING;KURODA HIROMITSU;KUROKI KAZUMA;HATA SHOHEI;ODA YUICHI
分类号 H01L21/52;B23K35/14;B23K35/28 主分类号 H01L21/52
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