| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of preventing reduction in Schottky junction area and is manufactured at low cost with simple processes. <P>SOLUTION: A semiconductor layer 1, which is a drift layer containing comparatively low concentration n-type impurity, is provided over a silicon carbide substrate 2. A plurality of groove-shape concaves TR are provided on the main surface of the semiconductor layer 1, and a semiconductor region 3a containing p-type impurity is formed inside side surfaces of the groove-shape concaves TR. A conductor region 4 containing p-type impurity is provided around a region where the groove-shape concaves TR are provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
