| 摘要 |
A semiconductor device includes a substrate and a stress generating film. A first surface of the substrate includes a protruding part at each of two end portions. The substrate includes a semiconductor element. The stress generating film is formed so as to come into contact with a second surface of the substrate that is opposite to the first surface of the substrate. The stress generating film is in a shape which causes a second stress that offsets at least a part of a first stress occurring as a result of bonding between an external substrate and the protruding part.
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