| 摘要 |
<p>The signal line (12) is arranged on a substrate (11) and has a switching component (13) moved perpendicular to the plane of the substrate, to vary the impedance of the high frequency micro-electromechanical system (MEMS). The signal line and the switching component are formed in a single plane of metallization. One part of the switching component is fastened to the substrate, the rest comprises a flexural region, such that it moves at right angles to the surface of the substrate. The signal line and switch form a resonant line with a flexural region (13a) varying the resonator frequency. The switching component is formed on the signal line. In a variant, it is arranged separately from the signal line. In this case, mutual coupling between them is varied by moving the switching component. The signal line is in two or more sections, which are coupled by the switching component. One or more switches of this type form line resonators coupling one signal line to another. An electrode arrangement produces an electrostatic force, which drives a moveable part (13a) of the switching component. In one switching state, the switching component lies entirely in the plane of the signal line; in another it projects above the plane of the signal line. The MEMS unit is formed by metallizing a prepared substrate, followed by formation of the switching component, with the signal line and switch lying in the same metallization plane. The region of the switching component is prepared with an anti-adhesion coating, preventing adhesion between the moveable section and the substrate. A sacrificial layer is used, its thickness being measured in nanometers. An insulation layer (15) is formed on the substrate. The signal line and switch are formed upon it. Ions are embedded below the moving switch component, by ion implantation. An independent claim is included for the method of manufacturing the MEMS component.</p> |
